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Micro Hole Drilling/ Selective Material Removal/ Annealing/ Ultrafine Marking
Widely used in semiconductor integrated circuits, including single and double mesa glass passivation diode wafer cutting and dicing, single and double mesa thyristor wafer cutting and dicing, gallium arsenide, gallium nitride, IC wafer cutting and dicing.
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Principle of picosecond laser scribing (focus burst cutting in transparent material):
Through the Bessel or DOE optical system, the Gaussian laser beam is compressed to the diffraction limit. Under the action of the laser beam with a high repetition rate of 100-200KHz and a very short pulse width of 10ps, the focused spot diameter is as small as 3μm, and it has a very high peak power. Density, when it is focused inside the transparent material, it instantly vaporizes the material in the area to generate a vaporization zone, and diffuses to the upper and lower surfaces to form nonlinear cracks, thereby realizing the cutting and separation of the material. Common transparent materials including glass, sapphire and semiconductor silicon wafers (infrared radiation is able to transmit semiconductor silicon materials) are suitable for picosecond & femtosecond laser scribing.
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